| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| DOD1H0015-900EF | Ceramic 780-4 | DC~1500 | RF Energy | 58.7 | 58.3 | 79.8 | 18.0 | Engineering Sample | |
| DOD1H0015-1800EF | Ceramic 1230-4 | DC~1500 | RF Energy | 61.4 | 60.8 | 80.2 | 20.8 | Released Product | |
| DOD1H2425-320EF | Ceramic 780-4 | 2400~2500 | RF Energy | 55.1 | 54.8 | 73.5 | 14.0 | Released Product | |
| DOD1H2425-600EF | Ceramic 1230-4 | 2400~2500 | RF Energy | 57.9 | 57.4 | 72.5 | 15.0 | Released Product | |
| DOD1H2425-30N | QFN 8mm×8mm | 2400~2500 | RF Energy | 44.7 | 43.0 | 69.0 | 26.4 | Engineering Sample |
DOD1H0015-900EF is a 900 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial,scientific and medical applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 58.7 | dBm |
Power Gain @ 915 MHz | 18.0 | dB |
Efficiency @ 915 MHz | 79.8 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 48 V, IDQ = 200 mA, Input signal CW.
DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 61.4 | dBm |
Power Gain @ 650 MHz | 20.8 | dB |
Efficiency @ 650 MHz | 80.2 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, IDQ = 200 mA, test signal is CW.
DOD1H2425-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 55.1 | dBm |
Power Gain @ 2450 MHz | 14.0 | dB |
Efficiency @ 2450 MHz | 73.5 | % |
ACPR @ 2450 MHz | / | dBC |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, VGS = - 4.8 V, test signal is CW.
DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 57.9 | dBm |
Power Gain @ 2450 MHz | 15.0 | dB |
Efficiency @ 2450 MHz | 72.5 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, VGS = - 4.8 V, test signal is CW.
DOD1H2425-30N is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy application at frequencies from 2400 MHz to 2500 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2400 | MHz |
| Frequency (Max.) | 2500 | MHz |
| Supply Voltage (Typ.) | 32 | V |
| Psat (Typ.) | 44.7 | dBm |
| Power Gain @ 2450 MHz | 26.4 | dB |
| Efficiency @ 2450 MHz | 69.0 | % |
| ACPR @ 2450 MHz | / | dBc |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 32 V, IDQ_Driver = 20 mA, IDQ_Carrier = 45 mA, VGS_Peaking = -4.2 V, test signal is CW.
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