| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| D2H095DE1 | |||||||||
| DOD1H0015-1800EF | Ceramic 1230-4 | DC~1500 | RF Energy | 61.4 | 60.8 | 80.2 | 20.8 | Released Product | |
| D2H065DE1 | |||||||||
| D2H065DB1 | |||||||||
| DOD1H2425-320EF | Ceramic 780-4 | 2400~2500 | RF Energy | 55.1 | 54.8 | 73.5 | 14.0 | Released Product | |
| D2H055DB1 | |||||||||
| DOD1H2425-600EF | Ceramic 1230-4 | 2400~2500 | RF Energy | 57.9 | 57.4 | 72.5 | 15.0 | Released Product | |
| D2H046DA1 | |||||||||
| DXG1CH60B-45CF/DF | Ceramic 200-2 | DC~6000 | Multi-Market | 46.5 | - | - | - | Released Product | |
| D2H042DB1 | |||||||||
| D2H039DB1 | |||||||||
| D2H039DA1 | |||||||||
| D2H025DB1 | |||||||||
| D2H025DA1 | |||||||||
| D2H014DA1 | |||||||||
| D2H010DA1 | |||||||||
| DXG1PH19A-60N | DFN 7mm×6.5mm | 1805~1880 | Telecom Infrastructure | 48.0 | 40.3 | 61.0 | 18.0 | Released Product | |
| DXG1PH22A-120N | DFN 7mm×10mm | 1805~2170 | Telecom Infrastructure | 50.8 | 42.3 | 55.5 | 14.6 | Released Product | |
| DXG2PH27A-100N | DFN 7mm×6.5mm | 2496~2690 | Telecom Infrastructure | 49.9 | 41.3 | 56.5 | 15.9 | Released Product | |
| DXG2PH36A-70N | DFN 7mm×6.5mm | 3300~3800 | Telecom Infrastructure | 48.1 | 39.3 | 53.5 | 15.4 | Released Product |
D2H095DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*2685 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 95 | W |
| 效率 | 81 | % |
| 增益 | 21.0 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 297 mA, 频率 = 2.6 GHz
DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 61.4 | dBm |
Power Gain @ 650 MHz | 20.8 | dB |
Efficiency @ 650 MHz | 80.2 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, IDQ = 200 mA, test signal is CW.
D2H065DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 880*2000 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 65 | W |
| 效率 | 82 | % |
| 增益 | 21.5 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 189 mA, 频率 = 2.6 GHz
D2H065DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 845*1995 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 65 | W |
| 效率 | 82 | % |
| 增益 | 21.8 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 193 mA, 频率 = 2.6 GHz
DOD1H2425-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 55.1 | dBm |
Power Gain @ 2450 MHz | 14.0 | dB |
Efficiency @ 2450 MHz | 73.5 | % |
ACPR @ 2450 MHz | / | dBC |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, VGS = - 4.8 V, test signal is CW.
D2H055DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1755 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 55 | W |
| 效率 | 82 | % |
| 增益 | 22.0 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 162 mA, 频率 = 2.6 GHz
DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 57.9 | dBm |
Power Gain @ 2450 MHz | 15.0 | dB |
Efficiency @ 2450 MHz | 72.5 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, VGS = - 4.8 V, test signal is CW.
D2H046DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 880*1640 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 46 | W |
| 效率 | 82 | % |
| 增益 | 21.3 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 143 mA, 频率 = 2.6 GHz
DXG1CH60B-45CF/DF is a 45 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz general purpose applications. It features wide bandwidth, high gain and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 46.5 | dBm |
Small Signal Gain2 | 17.0 | dB |
Peak Efficiency @ 2600 MHz | 65.0 | % |
Note:
1 Typical Performance in Dynax Wideband Class AB Demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 80 mA, Input signal Pulsed CW, Pulse Width = 100 μs, Duty Cycle = 10 %.
2 Measured at Pout = Psat – 6 dB.
D2H042DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1515 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 42 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 126 mA, 频率 = 2.6 GHz
D2H039DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1395 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 39 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 116 mA, 频率 = 2.6 GHz
D2H039DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 845*1092 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 39 | W |
| 效率 | 82 | % |
| 增益 | 22.1 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 120 mA, 频率 = 2.6 GHz
D2H025DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 685*1035 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 25 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 74 mA, 频率 = 2.6 GHz
D2H025DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 645*825 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 25 | W |
| 效率 | 82 | % |
| 增益 | 21.9 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 76 mA, 频率 = 2.6 GHz
D2H014DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 695*568 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 14 | W |
| 效率 | 83 | % |
| 增益 | 22.9 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 42 mA, 频率 = 2.6 GHz
D2H010DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 685*570 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 10 | W |
| 效率 | 83 | % |
| 增益 | 23.7 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 30 mA, 频率 = 2.6 GHz
DXG1PH19A-60N is a 60 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 1880 MHz cellular base station applications. It features input matching, wideband and a DFN package.d
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 1880 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 48.0 | dBm |
Power Gain @ 1842 MHz | 18.0 | dB |
Efficiency @ 1842 MHz | 61.0 | % |
ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 65 mA, VGSB = - 4.7 V, Pout = 40.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 1805 | MHz |
| Frequency (Max.) | 2170 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 50.8 | dBm |
| Power Gain @ 2110 MHz | 14.6 | dB |
| Efficiency @ 2110 MHz | 55.5 | % |
| ACPR @ 2100 MHz | -35.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.9 | dBm |
| Power Gain @ 2600 MHz | 15.9 | dB |
| Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 48.1 | dBm |
Power Gain @ 3500 MHz | 15.4 | dB |
Efficiency @ 3500 MHz | 53.5 | % |
| ACPR @ 3500 MHz | -31.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
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