| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| DXG2PH36A-100N | DFN 7mm×6.5mm | 3300~3800 | Telecom Infrastructure | 50.2 | 41.3 | 54.3 | 15.8 | Released Product | |
| DXG2PH50B-20N | DFN 4mm×4.5mm | 4400~5000 | Telecom Infrastructure | 42.8 | 47.8 | 37.0 | 16.0 | In Development | |
| DXG2PH50A-90N | DFN 7mm×6.5mm | 4800~5000 | Telecom Infrastructure | 49.6 | 41.3 | 48.3 | 12.5 | In Development | |
| DXG2PH60B-14N | DFN 4mm×4.5mm | DC~6000 | Telecom Infrastructure | 42.2 | / | 41.8 | 15.4 | Released Product | |
| DXG1PH60P-40N | DFN 7mm×6.5mm | DC~6000 | Telecom Infrastructure | 46.3 | 33.0 | 31.7 | 21.3 | Released Product | |
| DXG1PH60P-60N | DFN 7mm×6.5mm | DC~6000 | Telecom Infrastructure | 47.8 | 40.0 | 55.0 | 19.5 | Released Product | |
| DOD1H2425-30N | QFN 8mm×8mm | 2400~2500 | RF Energy | 44.7 | 43.0 | 69.0 | 26.4 | Engineering Sample | |
| DMC1G26-10MN | LGA 7mm×7mm | 2500~2700 | Telecom Infrastructure | 39.2 | 30.0 | 46.3 | 29.4 | Engineering Sample | |
| DMC1G35-12MN | LGA 7mm×7mm | 3300~3600 | Telecom Infrastructure | 39.5 | 30.0 | 42.9 | 29.9 | Released Product |
DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 50.2 | dBm |
Power Gain @ 3500 MHz | 15.8 | dB |
Efficiency @ 3500 MHz | 54.3 | % |
ACPR @ 3500 MHz | -32.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 4400 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 42.8 | dBm |
| Power Gain @ 4900 MHz | 16.0 | dB |
| Efficiency @ 4900 MHz | 47.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 4800 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.6 | dBm |
| Power Gain @ 4880 MHz | 12.5 | dB |
| Efficiency @ 4880 MHz | 48.3 | % |
| ACPR @ 4880 MHz | -32.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 42.2 | dBm |
Power Gain @ 3500 MHz | 15.4 | dB |
Efficiency @ 3500 MHz | 41.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.
DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station
applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 46.3 | dBm |
Power Gain @ 1842 MHz | 21.3 | dB |
Efficiency @ 1842 MHz | 31.7 | % |
ACPR @ 1842 MHz | -41.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station
applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 47.8 | dBm |
Power Gain @ 1842 MHz | 19.5 | dB |
Efficiency @ 1842 MHz | 55.0 | % |
ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DOD1H2425-30N is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy application at frequencies from 2400 MHz to 2500 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2400 | MHz |
| Frequency (Max.) | 2500 | MHz |
| Supply Voltage (Typ.) | 32 | V |
| Psat (Typ.) | 44.7 | dBm |
| Power Gain @ 2450 MHz | 26.4 | dB |
| Efficiency @ 2450 MHz | 69.0 | % |
| ACPR @ 2450 MHz | / | dBc |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 32 V, IDQ_Driver = 20 mA, IDQ_Carrier = 45 mA, VGS_Peaking = -4.2 V, test signal is CW.
DMC1G26-10MN is a 8 W RF GaN HEMT Module with first generation RF GaN technology from Dynax, which is ideal for small cell applications at frequencies from 2500 MHz to 2700 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2500 | MHz |
| Frequency (Max.) | 2700 | MHz |
| Supply Voltage (Typ.) | 24 | V |
| Psat (Typ.) | 39.2 | dBm |
| Power Gain @ 2600 MHz | 29.4 | dB |
| Efficiency @ 2600 MHz | 46.3 | % |
| ACPR @ 2600 MHz | -33.0 | dBc |
Note: Above performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 24 V,IDQ_DRIVER = 10 mA, IDQ_CARRIER = 20 mA, VGS_PEAK = - 2.7 V,Single-Carrier W-CDMA, IQ Magnitude Clipping,Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DMC1G35-12MN is a 10 W RF GaN HEMT Module with first generation RF GaN technology from Dynax, which is ideal for small cell applications at frequencies from 3300 MHz to 3600 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3600 | MHz |
| Supply Voltage (Typ.) | 24 | V |
| Psat (Typ.) | 39.5 | dBm |
| Power Gain @ 3500 MHz | 29.9 | dB |
| Efficiency @ 3500 MHz | 42.9 | % |
| ACPR @ 3500 MHz | -35.5 | dBc |
Note: Above performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink,test condition: VDS = 24 V, IDQ_DRIVER = 10 mA, IDQ_CARRIER = 30 mA,VGS_PEAK = - 3.0 V, Single-Carrier W-CDMA, IQ Magnitude Clipping,Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
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